Transparent and Flexible Thin Film Electroluminescent Devices Using HiTUS Deposition and Laser Processing Fabrication

Highly transparent thin film electroluminescent structures offering excellent switch on characteristics, high luminance and large break-down voltages have been deposited onto glass and flexible polymeric materials with no substrate heating using high target utilization sputtering. Deposition of ZnS:Mn as the active light emitting layer and Y2O3,Al2O3,Ta2O5, and HfO2 as dielectric materials arranged in single and multiple layer configurations were investigated. Devices incorporating Al2O3,HfO2 quadruple layers demonstrate the highest attainable luminance at low threshold voltage. Single pulse excimer laser irradiation of the phosphor layer prior to deposition of the top dielectric layer enhanced the luminance of the devices. The devices fabricated on glass and polymeric substrates exhibited a maximum luminance of 500 and 450 cdm−2 when driven at 270 VRMS and 220 VRMS, respectively, with a 1.0 kHz sine wave

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

Tin doped indium oxide (ITO) has been directly deposited onto a variety of flexible materials by a reactive sputtering technique that utilises a remotely generated, high density plasma. This technique, known as high target utilisation sputtering (HiTUS), allows for the high rate deposition of good quality ITO films onto polymeric materials with no substrate heating or post deposition annealing. Coatings with a resistivity of 3.8 ×10−4 Ωcm and an average visible transmission of greater than 90% have been deposited onto PEN and PET substrate materials at a deposition rate of 70 nm/min. The electrical and optical properties are retained when the coatings are flexed through a 1.0 cm bend radius, making them of interest for flexible display applications

Photoluminescence enhancement of ZnO via coupling with surface plasmons on Al thin films

We present that the ultra-violet emission of ZnO can be enhanced, as much as six-times its integral intensity, using an Al thin interlayer film between the Si substrate and ZnO thin film and a postfabrication laser annealing process. The laser annealing is a cold process that preserves the chemical state and integrity of the underlying aluminum layer, while it is essential for the improvement of the ZnO performance as a light emitter and leads to enhanced emission in the visible and in the ultraviolet spectral ranges. In all cases, the metal interlayer enhances the intensity of the emitted light, either through coupling of the surface plasmon that is excited at the Al/ZnO interface, in the case of light-emitting ZnO in the ultraviolet region, or by the increased back reflection from the Al layer, in the case of the visible emission. In order to evaluate the process and develop a solid understanding of the relevant physical phenomena, we investigated the effects of various metals as interlayers (Al, Ag, and Au), the metal interlayer thickness, and the incorporation of a dielectric spacer layer between Al and ZnO. Based on these experiments, Al emerged as the undisputable best choice of metal interlayers because of its compatibility with the laser annealing process, as well as due to its high optical reflectivity at 380 and 248 nm, which leads to the effective coupling with surface plasmons at the Al/ZnO interfaces at 380 nm and the secondary annealing of ZnO by the back-reflected 248 nm laser beam

Simulating the opto-thermal processes involved in laser induced self-assembly of surface and sub-surface plasmonic nano-structuring

Nano-structuring of metals is one of the greatest challenges for the future of plasmonic and photonic devices. Such a technology calls for the development of ultra-fast, high-throughput and low cost fabrication techniques. Laser processing accounts for the aforementioned properties, representing an unrivalled tool towards the anticipated arrival of modules based in metallic nano-structures, with an extra advantage: the ease of scalability. Specifically, laser nano-structuring of an ultra-thin metal film or an alternating metal film on a substrate/metal film on a substrate results respectively on surface (metallic nanoparticles on the surface of the substrate) or subsurface (metallic nanoparticles embedded in a dielectric matrix) plasmonic patterns with many applications. In this work we investigate theoretically the photo-thermal processes involved in surface and sub-surface plasmonic nano-structuring and compare to experiments. To this end, we present a design process and develop functional plasmonic nano-structures with pre-determined morphology by tuning the annealing parameters like the laser fluence and wavelength and/or the structure parameters like the thickness of the metallic film and the volume ratio of the metal film on a substrate-metal composite. For the surface plasmonic nano-structuring we utilize the ability to tune the laser's wavelength to either match the absorption spectral profile of the metal or to be resonant with the plasma oscillation frequency, i.e. we utilize different optical absorption mechanisms that are size-selective. Thus, we overcome a great challenge of laser induced self assembly by combining simultaneously large-scale character with nanometer scale precision. For subsurface plasmonic nano-structuring, on the other hand, we utilize the temperature gradients that are developed spatially across the metal/dielectric nano-composite structure during the laser treatment. We find that the developed temperature gradients are strongly depended on the nanocrystalline character of the dielectric host which determines its thermal conductivity, the composition of the ceramic/metal and the total thickness of the nano-composite film. The aforementioned material parameters combined with the laser annealing parameters can be used to pre-design the final morphology of the sub-surface plasmonic structure. The proposed processes can serve as a platform that will stimulate further progress towards the engineering of plasmonic devices

Laser-driven structural modifications and diffusion phenomena of plasmonic AlN/Ag stratified films

Laser annealing (LA) of AlN/Ag multilayers was proven to be an effective process to control the structure and dispersion of Ag into the AlN resulting in intense coloration via the localized surface plasmon resonance, which is of particular importance for decorative applications. In this work we present a study of the structural changes occurring in various AlN/Ag multilayers after LA, in an effort to establish firm knowledge of the diffusion and re-nucleation mechanisms that occur during the laser process. We investigate the effect of the basic LA parameters, such as the laser wavelength (193 and 248 nm), fluence (400–700 mJ/cm2), pressure (1 and 10 Bar) and number of pulses (1 and 2) and we show that the main processes is the Ag particle enhancement close to the film surface as a result of additive outidiffusion Ag and the formation of nanoparticles of varying size

When ellipsometry works best: a case study with transparent conductive oxides

As the library of potential materials with plasmonic behavior in the infrared (IR) grows, we must carefully assess their suitability for nanophotonic applications. This assessment relies on knowledge of the materials’ optical constants, best determined via spectroscopic ellipsometry (SE). Transparent conductive oxides are great candidates for IR plasmonics due to their low carrier concentration (compared to noble metals) and the ability to tailor their carrier concentration by manipulating the defect composition. When the carrier concentration becomes low enough, phonon and defect states become the dominant mechanisms of absorption in the IR spectral range, leading to near-IR (NIR) tailing effects. These NIR tailing effects can be misinterpreted for free carrier absorption, rendering NIR-visible-ultraviolet-SE (NIR-VIS-UV-SE) incapable of reliably extracting the carrier transport properties. In this work, we report the limitations of NIR-VIS-UV and IR-SE (in terms of carrier concentration) by investigating the transport mechanisms of indium tin oxide, aluminum-doped zinc oxide and gallium-doped zinc oxide. We find regions of carrier concentration where NIR-VIS-UV-SE cannot reliably determine the transport properties and we designate material-dependent and application-specific confidence factors for this case. For IR-SE, the story is more complex, and so we investigate the multifaceted influences on the limitations, such as phonon behavior, grain size, presence of a substrate, film thickness, and measurement noise. Finally, we demonstrate the importance of identifying the IR optical constants directly via IR-SE (rather than by extrapolation from NIR-VIS-UV-SE) by means of comparing specific figures of merits (Faraday and Joule numbers), deemed useful indicators for plasmonic performance

Laser induced ultrafast combustion synthesis of solution-based AlOx for thin film transistors

Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and transparent conductive oxide layers rather than on the insulator layer. In this work we present amorphous aluminum oxide (AlOx) thin films produced at low temperature (≤150 °C) via combustion synthesis triggered by ELA, for oxide thin film transistors (TFTs) suitable for manufacturing flexible electronics. The study showed that combining ELA and combustion synthesis leads to an improvement in the dielectric thin film's densification in a shorter time (≤15 min). Optimized dielectric layers were obtained combining a short drying cycle at 150 °C followed by ELA treatment. High breakdown voltage (4 MV cm−1) and optimal dielectric constant (9) was attained. In general, TFT devices comprising the AlOx fabricated with a drying cycle of 15 min followed by ELA presented great TFT properties, a high saturation mobility (20.4 ± 0.9 cm2 V−1 s−1), a small subthreshold slope (0.10 ± 0.01 V dec−1) and a turn-on voltage ∼0 V. ELA is shown to provide excellent quality solution-based high-κ AlOx dielectric, that surpass other methods, like hot plate annealing and deep ultraviolet (DUV) curing. The results achieved are promising and expected to be of high value to the printed electronic industry due to the ultra-fast film densification and the surface/area selective nature of ELA

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

We report the low temperature (T<70 ºC) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T<70 ºC and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25% - 35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm2 V-1s-1 at a carrier density of 2.3×1018 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements

Auxetic cardiac patches with tunable mechanical and conductive properties toward treating myocardial infarction

An auxetic conductive cardiac patch (AuxCP) for the treatment of myocardial infarction (MI) is introduced. The auxetic design gives the patch a negative Poisson's ratio, providing it with the ability to conform to the demanding mechanics of the heart. The conductivity allows the patch to interface with electroresponsive tissues such as the heart. Excimer laser microablation is used to micropattern a re-entrant honeycomb (bow-tie) design into a chitosan-polyaniline composite. It is shown that the bow-tie design can produce patches with a wide range in mechanical strength and anisotropy, which can be tuned to match native heart tissue. Further, the auxetic patches are conductive and cytocompatible with murine neonatal cardiomyocytes in vitro. Ex vivo studies demonstrate that the auxetic patches have no detrimental effect on the electrophysiology of both healthy and MI rat hearts and conform better to native heart movements than unpatterned patches of the same material. Finally, the AuxCP applied in a rat MI model results in no detrimental effect on cardiac function and negligible fibrotic response after two weeks in vivo. This approach represents a versatile and robust platform for cardiac biomaterial design and could therefore lead to a promising treatment for MI